| Device Engineer/Scientist |
Job Id: W280753 |
Posted On: 12/5/2009 |
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Location: Durham, NC;
Job Type: Full Time
Salary: $90000.00 to $115000.00/year
Degree: Doctor of Philosophy
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DescriptionThis will be a technical position for the GaN HEMT Product Development team. The position will entail all aspects of integrating various early stages of R&D into production, including MMIC/device process development and measurement.
Responsibilities:
h Develop detailed process travelers and inspect wafers through the fabrication, package and test processes.
h Coordinate with team of scientists, engineers, and technicians to develop fabrication processes for MMICs and discrete devices.
h Drive projects related to bringing new products and processes into production.
h Product line electrical data tracking and interpretation from a device physics perspective.
Preferred Qualifications:
h >5 years experience in semiconductor process development, including background in production environment.
h Device/circuit layout experience is a strong plus.
h RF measurement experience a strong plus.
h RF circuit design background a strong plus.
h Must have a whatever it takes attitude to get the job done (This may mean working >50 hours per week and/or on weekends when needed).
h Be willing to perform tasks outside of normal job duties and past experience
Minimum Requirements:
h PhD in Electrical Engineering, with solid-state device background, or related field is required.
h Extensive experience in III-V or GaN-related microwave device development.
h Previous hands-on experience with device layout, package and test.
h Understanding of physics of failure mechanisms in semiconductor devices.
h US Citizen or Green Card Holder (incumbent subject to US Government screening for Department of Defense Security Clearance)
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